Tuesday 24th October 2017
Tuesday 24th October 2017
Tuesday 24th October 2017
Tuesday 24th October 2017
Monday 23rd October 2017
Latest GaN-on-SiC devices target military communications and counter-IED designs
Friday 20th October 2017
Six new 650V Schottky barrier diodes deliver improvements in surge peak forward current and figure of merit
Thursday 19th October 2017
High volume production partnership supports rapid GaN power IC growth
Thursday 19th October 2017
High efficiency single board can be easily connected into any existing converter
Tuesday 17th October 2017
Tuesday 17th October 2017
Thursday 12th October 2017
High quality EpiEra wafer attains more than 99 percent defect free area
Tuesday 10th October 2017
500W GaN-on-Si power transistor for L-Band Airport Surveillance Radar (ASR) applications delivers more than 70 percent efficiency
Tuesday 10th October 2017
Friday 6th October 2017
Crystal growth furnace manufacturer, GTAT, has a solution that could see the price of SiC substrates plummet, reports Rebecca Pool.
Thursday 5th October 2017
Repeat order for AIX G5+ C system targets GaN epitaxial wafers and devices for power electronics applications
Thursday 5th October 2017
Wednesday 4th October 2017
RF foundry and components business continues to innovate to meet demands of upcoming 5G systems
Tuesday 3rd October 2017
Tuesday 26th September 2017
Tuesday 26th September 2017
CoolSiC family has a new layout, new cell structure, and a new proprietary Schottky metal system
Tuesday 26th September 2017
Tuesday 26th September 2017
Monday 25th September 2017
Professor emeritus of Kyoto University recognised for contributions to pioneering research on SiC power devices and their practical applications
Friday 22nd September 2017
On-resistance is reduced by 40 percent and power loss by more than 20 percent compared to conventional SiC-MOSFETs
