Vishay releases space-saving 80V dual MOSFET
Requires 50 percent less PCB space than discrete devices
Vishay Intertechnology has introduced an 80V symmetric dual n-channel power MOSFET that combines high and low side TrenchFET Gen IV MOSFETs in a single 3.3 mm by 3.3 mm PowerPAIR3x3FS package.
The Vishay Siliconix SiZF4800LDT can be used in place of two discrete devices typically specified in the PowerPAK 1212 package — saving 50 percent board space.
The device can be used in synchronous buck converters, point of load (POL) converters, and half- and full-bridge power stages for DC/DC converters in radio base stations, industrial motor drives, welding equipment, and power tools. In these applications, the high and low side MOSFETs of the SiZF4800LDT form an optimised combination for 50 percent duty cycles, while its logic level turn-on at 4.5 V simplifies circuit driving, according to Vishay.
To increase power density, the MOSFET offers on-resistance 16 percent lower than the closest competing device in the same package dimensions. For increased efficiency in high frequency switching applications, the SiZF4800LDT offers a low on-resistance times total gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — of 131mW*nC.
The device’s flip-chip technology is said to enhances thermal dissipation — resulting in 54 percent lower thermal resistance compared to competing MOSFETs.
The SiZF4800LDT’s combination of low on-resistance and thermal resistance results in a continuous drain current of 36 A, which is 38 percent higher than the closest competing device. The MOSFET features a special pin configuration that enables a simplified PCB layout and supports shortened switching loops to minimise parasitic inductance.
