EPC publishes latest on GaN reliability
Phase-16 Reliability Report adds to knowledge on thermo-mechanical wear-out mechanisms and overvoltage guidelines
EPC has announced the publication of its Phase-16 Reliability Report, documenting continued work using test-to-fail methodology and adding specific guidelines for overvoltage specifications and improving thermo-mechanical reliability.
Compared to the Phase 15 Reliability Report, this version presents expanded data and analysis, according to the company. It now includes a general overview of the wear-out mechanisms of primary concerns for a given application. New to this version of the report, is a description of how to forecast the reliability of a system in a realistic mission profile that combines periods of substantial and minor stress.
Significant new material on the thermo-mechanical wear-out mechanisms and overvoltage guidelines includes a study of the impact of die size and bump shape on temperature cycling (TC) reliability. This report also includes a study of overvoltage robustness for both the gate and the drain of GaN transistors.
This report is divided into the following sections: Section 1: Determining wear-out mechanisms using test-to-fail methodology, Section 2: Using test-to-fail results to predict device lifetime in a system, Section 3: Wear-out mechanisms, Section 4: Mission-specific reliability predictions including solar, DC-DC, and lidar applications, and Section 5: Summary and conclusions.
According to Alex Lidow, CEO and co-founder of EPC, “The release of our Phase-16 report satisfies a critical need for ongoing research into GaN device reliability. This report provides valuable insights on mission robustness, ensuring devices meet the demands of diverse applications.”
