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5N+ releases GaN patents


Patent portfolio key to development of 600V-1200V vertical GaN-on-Si power devices

5N Plus, a Montreal-based producer of specialty semiconductors and materials, is launching the commercialisation rights for its portfolio of GaN-on-Si patents.

According to the company, these key patents can enable the rapid prototype development and first-to-market commercialisation of novel vertical GaN-on-Si power devices by companies operating in the high-power electronics (HPE), EVs and AI server sectors.

Today, lateral GaN is primarily used in low voltage (<400V) applications, such as chargers, but novel vertical GaN-on-Si has the potential to replace SiC, which is the current preferred material for medium and high voltage applications (i.e. EV inverters operating 650V).

“Our 54 patents have now been shown to be more high-performing and efficient than the current alternative through recent academic demonstrations. As such, our portfolio of patents is uniquely positioned to enable industry-leading HPE and EV companies to rapidly develop and commercialise first-to-market vertical GaN-on-Si power devices that will revolutionise high-voltage semiconductor applications,” said Gervais Jacques, president and CEO of 5N+.

The commercial rights of the 54 granted patents owned by 5N+ include mandatory use of large diameter thick silicon substrates (over 1mm), combined with masking layers to filter the dislocations. Increasing the thickness of large diameter silicon substrates in vertical GaN-on-Si devices enables increased voltage capacity without increasing the chip size. Also included in this patent is the ability to remove the substrate to form the backside contacts once the GaN growth is complete.

In addition, the Company holds lateral GaN-on-Si patents for RF applications that will enable next generation 5G and 6G wireless communication components. 5N+ holds these patents through its wholly owned subsidiary AZUR SPACE Solar Power GmbH, a maker of multi-junction solar cell technology.

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