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Friday 6th October 2017
Crystal growth furnace manufacturer, GTAT, has a solution that could see the price of SiC substrates plummet, reports Rebecca Pool.
Thursday 5th October 2017
Repeat order for AIX G5+ C system targets GaN epitaxial wafers and devices for power electronics applications
Wednesday 4th October 2017
RF foundry and components business continues to innovate to meet demands of upcoming 5G systems
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Tuesday 26th September 2017
CoolSiC family has a new layout, new cell structure, and a new proprietary Schottky metal system
Tuesday 26th September 2017
Tuesday 26th September 2017
Monday 25th September 2017
Professor emeritus of Kyoto University recognised for contributions to pioneering research on SiC power devices and their practical applications
Friday 22nd September 2017
On-resistance is reduced by 40 percent and power loss by more than 20 percent compared to conventional SiC-MOSFETs
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Thursday 21st September 2017
Yaskawa’s Σ-7 F uses Transphorm's high-voltage GaN FETs to deliver better performance in a smaller form factor
Wednesday 20th September 2017
USB-PD adapter reference design delivers 65W in 51 x 43 x 20.5 mm
Friday 15th September 2017
Battery sizing: oversize, augment, reduce or repower? How big is too big? Fliss Jones and the Everoze storage team want to settle the matter, once and for all.
Thursday 14th September 2017
Company reports a threading screw dislocation density below 500 cm-2
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Thursday 14th September 2017
PRESiCE process should lower barrier of entry to SIC market and increase innovation, says NC State team
Thursday 14th September 2017
Company to expand wafer capacity from 3,000 to 5,000 wafers per month next year
Wednesday 13th September 2017
The 1.2-MW PV system was officially opened in Rafsanjan in mid-August with a ceremony attended by politicians, the international media and project partners.
Tuesday 12th September 2017
First look at next generation development tool kicks off four days of education about high-voltage GaN design techniques and testing

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