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Thursday 7th December 2017
Toshiba describes process for reducing impurities in the gate dielectric of GaN MOSFETs at IEDM
Thursday 7th December 2017
Fujitsu indicates that using this technology for heat dissipation allows high-efficiency cooling of high-power gallium nitride (GaN) high-electron-mobility transistors (HEMTs), enabling stable operations of power amplifiers at high power levels.
Wednesday 6th December 2017
Prototype transmit/receive module on single 6x6 mm chip will deliver miniaturised space radar systems for future missions
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Wednesday 6th December 2017
Air Force Research Laboratory researchers use boron nitride to transfer GaN circuits to flexible substrates
Wednesday 6th December 2017
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Tuesday 5th December 2017
Mitsubishi and University of Tokyo are first to quantify electron scattering mechanisms in SiC power devices to reduce energy consumption
Tuesday 5th December 2017
Tuesday 5th December 2017
Major four-year research project aims to ramp up the commercialisation of new products and processes across the renewable energy sector in Northern Ireland, Ireland and Scotland
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Monday 4th December 2017
Global economic growth, new markets and resurging defence opportunities are fueling the growth of advanced inertial, high-end sensors (HES) according to Yole Developpement researchers.
Monday 4th December 2017
GALOIS Series uses bright-field confocal optics, enabling high-speed inspection of various kinds of GaN wafer defects and high-resolution observation of defect images
Friday 1st December 2017
Company to exhibit technologies for a new generation of mobile and consumer power solutions
Friday 1st December 2017
Full SiC power modules will support further improvements in electric-powered car’s performance under racing conditions
Tuesday 28th November 2017
0.25μm process is now part of the European Preferred Part list supported by the European Space agency

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