NXP and ZF collaborate on SiC inverters
NXP gate driver family integrated into ZF’s next-generation 800V SiC-based traction inverter solutions
NXP Semiconductors has announced a collaboration with ZF Friedrichshafen on next-generation 800V SiC-based traction inverters for EVs, in which ZF will use NXP’s GD316x high-voltage isolated gate drivers.
As traction inverters migrate to SiC-based designs, the SiC power devices need to be paired with HV isolated gate drivers to harness advantages such as higher switching frequency, lower conduction losses, better thermal characteristics and higher robustness at high voltages, compared to previous generation silicon-based IGBT and MOSFET power switches.
The GD316x family of gate drivers incorporates a number of programmable control, diagnostic, monitoring, and protection features, designed to drive SiC power modules.
Carsten Götte, SVP electrified Powertrain Technology at ZF said: “The combination of ZF's expertise in motor control and power electronics with NXP's GD316x gate driver family enables us to provide our latest SiC-based traction inverters with higher power and volume density, efficiency and differentiation, and provide our customers with significant safety, efficiency, range and performance improvements.”
Robert Li, SVP and general manager, Electrification at NXP said: “Together with ZF, we are developing next-generation power electronics for future EVs. Our gate driver family implements a number of outstanding features to both protect and unleash the benefits of high-voltage SiC power switches, making them an ideal choice for ZF’s new SiC-based traction inverter solutions.”
