Infineon announces next gen CoolGaN
Infineon has announced two new generations of high voltage (HV) and medium voltage (MV) CoolGaN devices which now enable customers to use GaN in voltage classes from 40 V to 700 V in a broader array of applications.
The two product families are manufactured on 8-inch in-house foundry processes in Kulim (Malaysia) and Villach (Austria).
“Today’s announcement builds nicely on our acquisition of GaN Systems last year and brings to market a whole new level of efficiency and performance for our customers,” said Adam White, division president of Power & Sensor Systems at Infineon. “The new generations of our Infineon CoolGaN family in high and medium voltage demonstrate our product advantages and are manufactured entirely on 8 inch, demonstrating the fast scalability of GaN to larger wafer diameters.”
The new 650 V family addresses applications in consumer, data centre, industrial and solar. The second new family manufactured on the 8-inch process includes CoolGaN transistor voltage classes 60 V, 80 V, 100 V and 120 V; and 40 V bidirectional switch (BDS) devices. The medium voltage G3 products are targeted at motor drive, telecom, data centre, solar and consumer applications.
The CoolGaN 650 V G5 will be available in Q4 2024 and the medium voltage CoolGaN G3 will be available in Q3 2024. Samples are available now. More information is available here.
