Mitsubishi to sample latest 1.2kV IGBT module
Mitsubishi Electric will shortly be sampling its new LV100-type 1.2-kV IGBT module for solar and other renewable-energy power-supply systems.
Based on eighth-generation IGBTs, the module is designed to minimise power loss and maximise output power of inverters and other components in power systems, such as photovoltaic power-generation systems and storage batteries.
Since their launch in 1990, Mitsubishi Electric’s IGBT-based modules have been valued for their performance and reliability in applications in the consumer, automotive, industrial and railway sectors.
The company has now developed its eighth-generation IGBT with original split-dummy-active (SDA) and controlling-carrier plasma-layer (CPL) structures.
Compared with an existing product, the new LV100-type 1.2-kV module with an eighth-generation IGBT chips reduce power loss by approximately 15 percent in inverters used in solar power-generation systems, storage batteries and more.
In addition, the current rating of 1,800A, which is 1.5 times higher than that of the existing product, is achieved by optimising the IGBT and diode chips layout, which is expected to boost inverter output power.
The module’s conventional package is said to be easy to connect in parallel and can accommodate inverter configurations spanning a wide range of capacitances.
The module will be exhibited at the 39th Electronics R&D, Manufacturing and Packaging Technology Expo (NEPCON JAPAN 2025) to be held at Tokyo Big Sight, Japan, from January 22 to 24, as well as other exhibitions in North America, Europe, China and additional locations.
