Vishay MOSFET slashes on-resistance by 32%
To provide higher efficiency and power density for industrial applications, Vishay has introduced a new 40 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK 10x12 package with best in class on-resistance.
Compared to competing devices in the same footprint, the Vishay Siliconix SiJK140E slashes on-resistance by 32 percent while offering 58 percent lower on-resistance than 40V MOSFETs in the TO-263-7L.
With on-resistance down to 0.34 mΩ typical at 10 V, the device released minimises power losses from conduction to increase efficiency while improving thermal performance with a low RthJC of 0.21 C/W typical.
By allowing designers to utilise one device instead of two in parallel to achieve the same low on-resistance, the SiJK140E also improves reliability and mean time between failures (MTBF).
The MOSFET features a bond-wireless (BWL) design that minimises parasitic inductance while maximising current capability. While TO-263-7L solutions in bond-wired (BW) packages are limited to currents of 200 A, the SiJK140E offers a continuous drain current up to 795 A for increased power density while providing a robust SOA capability.
Occupying an area of 120 mm2, the device’s PowerPAK 10x12 package saves 27 percent PCB space compared to the TO-263-7L while offering a 50 percent lower profile.
The SiJK140E is suitable for synchronous rectification, hot swap switching, and OR-ing functionality. Typical applications will include motor drive controls, power tools, welding equipment, plasma cutting machines, battery management systems, robotics, and 3D printers. To avoid shoot-through in these products, the standard-level FET offers a high threshold voltage of 2.4Vgs.
RoHS-compliant and halogen-free, the MOSFET is 100 percent Rg and UIS tested.
