CGD demos 650V GaN ICs in 800V inverter
Cambridge GaN Devices (CGD) and IFP Energies Nouvelles (IFPEN), a French public research and training organisation, have developed a demo which confirms the suitability of CGD's ICeGaN 650V GaN ICs in a multi-level, 800 VDC inverter.
The demo delivers high power density – 30 kW/l - which is greater than can be achieved by more expensive, SIC-based devices. The inverter realisation also demonstrates the ease of paralleling that ICeGaN technology enables; each inverter node has three 25mΩ / 650V ICeGaN ICs - 36 devices in total - in parallel.
This multi-level GaN Inverters can power electric motors to over 100 kW peak, 75 kW continuous power. The CGD/IFPEN demo features: a high voltage input of up to 800Vdc; 3-phase output; a peak current of 125 Arms (10s) (180 Apk); and a continuous current of 85 Arms continuous (120 Apk).
CGD says that the multi-level design proposed by IFPEN reveals several benefits of ICeGaN including increased efficiency, higher switching frequencies, reduced EMI, enhanced thermal management, as well as a modular design.
