Loading...
News Article

Toshiba samples latest 1200V SiC MOSFETs

News
Company ships early bare die test samples of new low on-resistance devices for automotive traction inverters

Toshiba Electronics Europe has announced early test samples in bare die format of new 1200V SiC MOSFETs with low on-resistance (RDS(ON)) and high levels of reliability. The devices are suited to applications within automotive traction inverters.

The new X5M007E120 uses a manufacturing process that reduces on-resistance per unit area by up to 30 percent, according to the company. Unlike existing methods that utilise a striped-pattern construction, the new devices arrange the embedded Schottky barrier diodes (SBDs) in a check-pattern to achieve lower on-resistance.

Many SiC MOSFETs increase on-resistance as body diodes are energised during reverse conduction, which can lead to reliability issues. Toshiba SiC MOSFETs alleviate this issue by preventing body diodes from operating as SBDs are embedded into the MOSFETs. This approach maintains the reduction in on-resistance while ensuring reliability during reverse conduction.

The re-arrangement of SBDs in this device has suppressed body diode energisation, and the upper limit of unipolar operation has increased to around double without increasing the SBD mounting area. Additionally, channel density is improved. These enhancements contribute to energy efficiency in applications, including motor control inverters.

Reducing RDS(ON) within a SiC MOSFET can cause excess current flow during short-circuit operations. By adopting a deep barrier structure, the X5M007E120 reduces excessive current within the MOSFET section and leakage current in the SBDs section during short-circuit operation. This enables durability during short-circuit conditions while maintaining high levels of reliability against reverse conduction operation.

The new X5M007E120 has a VDSS of 1200V and is rated for a drain current (ID) of 229A continuously, with 458A for pulsed operation (ID Pulse). RDS(ON) is as low as 7.2mΩ, and the device can operate with channel temperatures (Tch) as high as 175°C. The devices are AEC-Q100 qualified for automotive applications.

Engineering samples of the new X5M007E120 are expected to ship during 2025, with mass production samples scheduled to start in 2026.

Toshiba samples latest 1200V SiC MOSFETs
Wolfspeed continues to streamline after poor Q1
Semiconductor value per car to reach $1k by 2029
Siemens launches SiC-based e-Starter
CGD and Qorvo develop motor control solution
US ITC says Innoscience infringed key EPC patent
ST announces family of gate drivers
Infineon and Stellantis partner on power architectures
Power grids supplied by renewables have lower intensity blackouts
Empower brings vertical power product to electronica
Vishay releases new automotive rectifiers
Cambridge GaN Devices to exhibit at Electronica
GaN and SiC 'first' for data centre PSU
Toshiba to exhibit power portfolio at electronica
Nexperia to partner with KOSTAL on automotive WBG devices
Navitas announces Q3 2024 results
Allegro to show new power products at electronica
Power Integrations adds 1700V GaN switcher chip
Infineon launches new generation of GaN discretes
Sanan expands high-voltage SiC portfolio
Infineon adds ASIL-D-compliant 3-phase gate driver
US lab wins $1M grant to boost SiC module voltages
Innoscience expands 100V automotive-grade portfolio
Toshiba and MIKROE introduce motor driving board
Magnachip expands MOSFET production
Infineon unveils world’s thinnest silicon power wafer
'All-GO-HEMT' to develop β-gallium oxide heterostructures
TI adds GaN manufacturing in Japan
Is ZF shelving Wolfspeed SiC fab chip project?
Vishay adds 'stretched' IGBT and MOSFET drivers
US team develop new thermal interface material
Allegro to show power portfolio at Electronica

×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: