Nexperia launches power MOSFETs in CCPAK1212
Nexperia has launched 16 new 80V and 100V power MOSFETs in the innovative copper-clip CCPAK1212 package, delivering improved power density and performance.
The copper-clip design sandwiches the power MOSFET silicon die between two pieces of copper, with the drain tab on one side and the source clip on the other. With wire bonds eliminated, this optimised assembly offers a low on-resistance, reduced parasitic inductances, high maximum current ratings and excellent thermal performance.
The range also includes application-specific MOSFETs (ASFETs) designed for AI server hot-swap functions. With top-side and bottom-side cooling options, these MOSFETs in CCPAK provide high power density and reliability, according to the company.
The PSMN1R0-100ASF device, for example, is a 0.99 mΩ 100V power MOSFET capable of conducting 460 A and dissipating 1.55 KW of power, yet in a CCPAK1212 package footprint that occupies only 12mm x 12mm of board space. The PSMN1R0-100CSF offers similar statistics in a top-side cooled version.
CCPAK1212 NextPower 80/100V MOSFETs are recommended for power-hungry industrial applications where high efficiency and high reliability are critical, including brushless DC (BLDC) motor control, switched-mode power supplies (SMPS), battery management systems (BMS) and renewable energy storage. The availability of such power-capable MOSFETs in a single package reduces the need for parallelism, simplifying designs and offering more compact, cost-effective solutions.
Across all these applications, the availability of top-side and bottom-side cooling options provides engineers a choice of thermal extraction techniques, especially helpful where dissipating heat through the PCB is impractical due to the sensitivity of other components.
"Despite offering market-leading performance, we know that some customers will be reticent to design-in a relatively new package", stated Chris Boyce, product group general manager at Nexperia. "For this reason, we have registered the CCPAK1212 with the JEDEC standards organisation (reference MO-359). We followed a similar approach when we introduced the first LFPAK MOSFET package some years ago and as a result there are now many compatible devices available in the market. You are never on your own for long when your innovations offer genuine value to your customers”, concluded Boyce.
All the new devices are supported with design-in tools, including thermally compensated simulation models. Traditional PDF datasheets are supplemented with Nexperia's interactive datasheets, which now incorporate a new 'graph-to-csv' feature that allows engineers to download, analyse and interpret the data behind each device's key characteristics.
Nexperia plans to extend CCPAK1212 packaging to power MOSFETs across all voltage ranges and also to its automotive qualified AEC-Q101 portfolios.
