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Wednesday 2nd April 2014
Diamond materials are anticipated to triple power density over silicon carbide
Wednesday 2nd April 2014
The systems are suited for testing devices made of  wide-bandgap materials like SiC and GaN, designed for use in "green," energy-efficient power generation and transmission systems and hybrid and all-electric vehicles.
Wednesday 2nd April 2014
Tuesday 1st April 2014
Wide band gap semiconductors may reduce the size of a vehicle cooling system by about 60 percent and cut the size of a fast DC charging station
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Tuesday 1st April 2014
The high gain gallium arsenide  power amplifiers with high linearity performance are suited to commercial, industrial and military applications
Tuesday 1st April 2014
The agreement will enable MACOM to deliver GaN wafers grown on 100mm, 150mm and 200mm silicon substrates for RF applications
Monday 31st March 2014
The gallium nitride on silicon power transistors can operate in harsh environmental conditions
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Friday 28th March 2014
The low RDSON device is suited for power management in mobile and other consumer application
Tuesday 25th March 2014
The devices support high output current in combination with an external power transistor
Tuesday 25th March 2014
The contract is aimed at the company transferring 0.14 µm gallium nitride technology and manufacturing on 6 inch wafers to produce air force millimetre wave devices
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Monday 24th March 2014
The new mid-voltage power MOSFETs include low on-resistance 80 V and 100 V devices in TO-220 packages
Friday 21st March 2014
The new lineup should Improve power efficiency and reduce product footprint
Thursday 20th March 2014
Yole believes GaN-on-silicon wafers are expected to capture more than 1.5 percent of the overall power substrate volume, This may suggest that 600V devices would take off in 2014 to 2015
Thursday 20th March 2014
The firm says its gallium nitride technology greatly reduces material waste and the energy needed to produce GaAs or silicon line amplifiers
Wednesday 19th March 2014
The acquisition will enable Hittite to provide high power gallium arsenide and gallium nitride wideband amplifiers
Tuesday 18th March 2014
The new subsidiary aims to enhance service and support for the rapidly expanding micro- and nano-electronic manufacturing customer base in region

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