Mitsubishi Electric To Launch Second-generation Full-SiC Power Modules For Industrial Use
Mitsubishi Electric Corporation announced today its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a newly developed SiC chip for industrial use. The low power loss characteristics and high carrier frequency operation1 of the SiC-MOSFET (metal oxide semiconductor field-effect transistor) and SiC-SBD (schottky barrier diode) chips in the modules are expected to facilitate the development of more efficient, smaller and lighter weight power
equipment in various industrial fields. Sales will start in January, 2021.
1) Will facilitate more power-efficient, smaller and lighter industrial equipment
- Junction field-effect transistor (JFET) doping technology reduces on-resistance by about 15% compared to that of conventional SiC products.
- Reducing mirror capacitance enables fast switching and reduces switching loss.
- Built-in SiC-MOSFET and SiC-SBD help to reduce power loss by approximately 70% compared to that of Mitsubishi Electric's conventional Si-IGBT modules.
- Power loss reduction and high carrier frequency operation will facilitate development of smaller and lighter external components, such as reactors and coolers.
2) Real time control (RTC) circuit balances short-circuit performance and low on-resistance
- Safe short-circuit performance and low on-resistance characteristics achieved with RTC circuit5 to block excessive current during short circuits.
- In the event of a short circuit, safely blocks excessive current from an external protection circuit by monitoring short-circuit detection signal.
3) Optimized internal chip layout for improved heat dissipation
- Decentralized and optimized placement of SiC-MOSFET and SiC-SBD chips inside modules help to improve heat dissipation, thereby allowing the use of smaller, or fanless, coolers.
In the face of growing demands for greater energy savings and environmental awareness, SiC power semiconductors have been attracting increasing attention for their potential to significantly reduce power loss.
Mitsubishi Electric has been developing module products equipped with SiC chips since 2010.