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Friday 25th April 2014
Market analyst Yole Développement says that GaN-on-silicon IP is advanced enough for mass production to commence
Friday 25th April 2014
Produced by industry experts, EPC has posted an eleven-part series on the theory, design basics and applications for gallium nitride power transistors
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Thursday 17th April 2014
The gallium arsenide based devices are designed for the point-to-point wireless backhaul market. The company has also taken on ex RFMD veteran Sushil Kumar as Senior Director of IC Development to lead engineering efforts for the radio wireless product line
Thursday 17th April 2014
The company has expanded its power portfolio with compact Qi- and PMA-compliant receivers for the densely-populated, cost-sensitive portable applications market
Wednesday 16th April 2014
Friday 11th April 2014
Maskless selective area epitaxy could result in large scale global adoption for GaN-on-silicon (100)  power devices
Thursday 10th April 2014
The UltraCMOS Global 1 power amplifier is claimed to be Industry’s first reconfigurable RF front end device. It enables a single platform design and supports TDD-LTE networks
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Wednesday 9th April 2014
The gallium nitride market will be dominated by power devices and draw most of its revenue from the communication infrastructure sector
Wednesday 9th April 2014
Mobile Hotspots program progresses towards providing 1 Gb/s communications backbone to deployed units. During Phase 1, performers demonstrated output power exceeding 1 watt and 20 percent power added efficiency (PAE) from a single gallium nitride (GaN) chip operating at E-Band frequencies
Tuesday 8th April 2014
Top quality diamond, with minimal defects, will be vital for it to compete with SiC, GaN and silicon in the high-frequency and high-power device market
Tuesday 8th April 2014
The firm says incumbent gallium arsenide-based RF solutions do not rise to the challenge of new complexity in the telecoms market
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Monday 7th April 2014
The collaboration is intended to realise critical radio components for small battery-operated wireless devices
Thursday 3rd April 2014
Using hybrid HVPE-Ammontermal approaches allows the manufacture of gallium nitride material for high-end applications. The key is that a low dislocation density is achieved

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