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Thursday 1st May 2014
The firm says extending its GaN-on-silicon and GaN-on-SiC technologies enables customers greater flexibility in selecting the best solution to solve their RF and microwave design challenges
Tuesday 29th April 2014
The gallium nitride on silicon carbide broadband transistor delivers 55 percent efficiency with 50 V operation over a DC-3500 MHz frequency range
Monday 28th April 2014
The indium gallium phosphide based PAs are suited for use in mobile devices. The AWT6530 is compatible with chipsets from suppliers including MediaTek, HiSilicon and Qualcomm
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Friday 25th April 2014
Julian Styles of GaN Systems, is one of the trio joining the PEIC to drive the development of power electronics
Friday 25th April 2014
Market analyst Yole Développement says that GaN-on-silicon IP is advanced enough for mass production to commence
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Friday 25th April 2014
Produced by industry experts, EPC has posted an eleven-part series on the theory, design basics and applications for gallium nitride power transistors
Thursday 17th April 2014
The gallium arsenide based devices are designed for the point-to-point wireless backhaul market. The company has also taken on ex RFMD veteran Sushil Kumar as Senior Director of IC Development to lead engineering efforts for the radio wireless product line
Thursday 17th April 2014
The company has expanded its power portfolio with compact Qi- and PMA-compliant receivers for the densely-populated, cost-sensitive portable applications market
Wednesday 16th April 2014
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Friday 11th April 2014
Maskless selective area epitaxy could result in large scale global adoption for GaN-on-silicon (100)  power devices
Thursday 10th April 2014
The UltraCMOS Global 1 power amplifier is claimed to be Industry’s first reconfigurable RF front end device. It enables a single platform design and supports TDD-LTE networks
Wednesday 9th April 2014
The gallium nitride market will be dominated by power devices and draw most of its revenue from the communication infrastructure sector
Wednesday 9th April 2014
Mobile Hotspots program progresses towards providing 1 Gb/s communications backbone to deployed units. During Phase 1, performers demonstrated output power exceeding 1 watt and 20 percent power added efficiency (PAE) from a single gallium nitride (GaN) chip operating at E-Band frequencies

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