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Thursday 5th July 2018
Many nations have mandated the phase-out of internal combustion engines in the coming decades to meet global greenhouse gas reduction targets. Electric vehicle (EV) performance can be optimized by utilizing advanced design and simulation tools that save manufacturers time and money. By Guilherme Tondello, Creative Solutions, and Puneet Sinha, Mentor-A Siemens Business, Mechanical Analysis Division
Wednesday 4th July 2018
Highly scalable US plant will meet growing demand for high quality SiC material
Tuesday 3rd July 2018
Caption: (L to R) Peter Myatt, ABB Channel Manager- Drives shakes hands with EDC managing director Nick Brown
Tuesday 3rd July 2018
Advanced semiconductors now support previously unattainable efficiency and power density. But these devices place high demands on test and measurement (T&M) equipment; oscilloscopes with isolated input channels are ideal solutions with wide-ranging analytical abilities. By: Dr. Markus Herdin, Product Manager for Oscilloscopes, Rohde & Schwarz, Munich
Monday 2nd July 2018
Imec and UTAC have developed a unique process for the wafer thinning and backside metallization of highly stressed GaN-on-200 mm silicon wafers. This has resulted in a packaged 650 V GaN device – smaller than state-of-the-art. Stefaan Decoutere, Program Director GaN Power Electronics at imec and Nicolo Ronchi, Researcher at imec explains the process.
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Friday 22nd June 2018
First step in the roll-out of a nationwide network of hundreds of stations
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Wednesday 20th June 2018
[Image source: Tesvolt]
Tuesday 19th June 2018
France-based GaN-on-silicon device pioneer, Exagan, has delivered transistors and switching ICs for pocket-sized fast chargers.
Tuesday 19th June 2018
Mill Farm energy storage site
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Friday 15th June 2018
The first of a three part series on The Rise of GaN-Based Power Systems : Technology and Market Overview by Paul Wiener, VP Strategic Marketing, GaN Systems
Wednesday 13th June 2018
Transaction is expected to produce significant cost savings and strengthen know-how for joint product development
Wednesday 13th June 2018
New GaN offerings include power transistors for 1800 MHz to 2200 MHz bands and for MIMO solutions at 3.5 GHz

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