EPC adds GaN FET for high-power USB-C
EPC has launched the 50V, 8.5 mΩ EPC2057. This GaN FET is specifically designed to meet the evolving needs of high-power USB-C devices including those used in consumer electronics, in-car charging, and eMobility.
“As USB-C PD continues to gain traction, efficient, compact, high-performance power solutions are vital. Our new GaN FET meets these needs with a reliable, efficient solution that enhances performance,” said Alex Lidow, EPC CEO and co-founder.
Also available is the EPC90155 development board, a half bridge featuring the EPC2057 GaN FET. It is designed for 40 V maximum operating voltage and 10 A maximum output current. The purpose of this board is to simplify the evaluation process of power systems designers to speed their product’s time to market
The EPC2057 is priced at $0.67 each in 2.5 Ku volumes. The EPC90155 development board is priced at $200.00 each.
