Navitas announces 'Fast' SiC MOSFET family
Gen-3 ‘Fast’ 650V and 1200V SiC MOSFETs target AI data centre power supplies, on-board chargers, EV roadside super-chargers, and solar energy storage
Navitas Semiconductor has announced the Gen-3 ‘Fast’ (G3F) 650V and 1200V SiC MOSFETs optimised for fast switching speed, high efficiency, and increased power density for AI data centre power supplies, on-board chargers (OBCs), fast EV roadside super-chargers, and solar / energy-storage systems (ESS).
The G3F family is said to offer 40 percent improvement to hard-switching figures-of-merits (FOMs) compared to competition in critical conduction mode totem pole power factor correction (CCM TPPFC) systems. This will enable increasing the wattage of next-generation AI power supply units (PSUs) up to 10 kW, and power per rack increase from 30 kW to 100-120 kW.
The SiC MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology, which offers a number of benefits. For instance, G3F MOSFETs have 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors, according to Navitas. The ‘trench-assisted planar’ technology also enables low RDS(ON) increase versus temperature, which the company says results in up to 20 percent lower RDS(ON) under real-life operation at high temperatures compared to competition.
Navitas’ latest 4.5 kW high-power density AI Server PSU reference design in CRPS185 form-factor, showcases the 650V-rated, 40mOhms G3F FETs for an Interleaved CCM TP PFC topology. Alongside the GaNSafe Power ICs in the LLC stage, a power density of 138 W/inch3 and peak efficiency above 97 percent is realised, which comfortably achieves ‘Titanium Plus’ efficiency standards, now mandatory in Europe.
For the EV market, 1200V/34 mOhm (G3F34MT12K) G3F FETs enable Navitas’ new 22 kW, 800V Bi-Directional OBC and 3KW DC-DC converter to achieve a superior power density of 3,5 kW/L and a peak efficiency of 95.5 percent.
“G3F sets a new standard for efficient, cool-running SiC performance, coupled with high reliability and robustness for high-power, high-stress systems,” noted Sid Sundaresan, SVP of SiC Technology and Operations. “We’re pushing the boundaries of SiC, with up to 600 kHz switching speeds, and hard-switching figures-of-merit up to 40 percent better than competition.”
The portfolio range covers industry-standard packages from D2PAK-7 to TO-247-4. Parts are available now to qualified customers.
