600V silicon MOSFET family targets power supply applications
New family boasts lowest reverse recovery time and improved thermal performance
Infineon is introducing the 600V CoolMOS 8 high voltage superjunction (SJ) MOSFET product family.
The devices, which integrate a fast body diode, are designed to combine the best features of the 600V CoolMOS 7 MOSFET series and are the successors to the P7, PFD7, C7, CFD7, G7 and S7 product families.
They are suitable for a wide range of applications such as server and industrial switched-mode power supply units (SMPS), EV chargers, and micro-solar.
The components come in SMD QDPAK, TOLL and ThinTOLL 8 x 8 packages. At 10 V, the 600V CoolMOS 8 SJ MOSFETs offer 18 percent lower gate charge (Q g) than the CFD7 and 33 percent lower than the P7. At 400 V, the product family offers a 50 percent lower output capacitance C OSS than the CFD7 and the P7. In addition, the turn-off losses (E oss) have been reduced by 12 percent compared to the CFD7 and the P7 and the reverse recovery charge (Q rr) is 3 percent lower compared to the CFD7.
Furthermore, the devices are claimed to offer the lowest reverse recovery time (t rr) on the market and the thermal performance has been improved by 14 to 42 percent compared to the previous generation.
Infineon will showcase the 600V CoolMOS 8 SJ MOSFETs at the upcoming PCIM show in Nuremberg.
