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Infineon announces 80V MOSFET OptiMOS 7


Latest chips feature 50 percent lower on-resistance than previous generation

Infineon has introduced the first product in its advanced power MOSFET technology OptiMOS 7 80V range, suited to upcoming 48V board net applications, and automotive DC-DC converters, 48V motor control, 48V battery switches and electric two- and three-wheelers.

The first device is the IAUCN08S7N013 which is said to feature a significantly increased power density and is available in the versatile, robust, and high-current SSO8 5 x 6 mm² SMD package.

Compared to the previous generation, the R DS(on) of the Infineon IAUCN08S7N013 has been reduced by more than 50 percent, and is now the best R DS(on) in the industry with a maximum of 1.3 mΩ. Users benefit from minimised conduction losses, superior switching performance and high power density in a 5 x 6 mm² package.

In addition, the IAUCN08S7N013 also features low package resistance and inductance, as well as a high avalanche current capability. For automotive applications, it has an extended qualification that goes beyond AEC-Q101.

The IAUCN08S7N013 is in mass-production and available now.

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