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Qorvo adds E1B-packaged 1200V SiC modules


New module family streamlines the power supply design process

Qorvo has announced four 1200V SiC modules - two half-bridge and two full-bridge - in a compact E1B package with RDS(on) starting at 9.4mΩ. These modules are e for electric vehicle (EV) charging stations, energy storage, industrial power supplies and solar power applications.

“The modules in this new family can replace as many as four discrete SiC FETs, thus simplifying thermomechanical design as well as assembly. Our cascode technology also allows higher switching frequency operation, further reducing solution size by using smaller external components” said Ramanan Natarajan, director of product line marketing for Qorvo’s SiC Power Products business.

“For our customers, the high efficiency of these modules streamlines the power supply design process so they can focus on the design, layout, assembly, characterisation and qualification of one module as opposed to numerous discrete components.”

Led by the 9.4mΩ UHB100SC12E1BC3N, these four SiC modules use Qorvo’s cascode configuration, which is designed to minimise RDS(on) and switching losses to maximise efficiency, especially in soft-switching applications.

Silver-sinter die attach reduces thermal resistance to as low as 0.23 °C/W; when combined with the stacked die construction found in the 'SC' part numbers, power cycling performance is improved by 2X over comparable SiC power modules on the market. Together, these characteristics contribute to thermal performance and reliability with the ease of use and power density of a highly integrated SiC power module, according to the company.

Qorvo offers the FET-Jet Calculator and QSPICE software to help in product selection and performance simulation.

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