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SemiQ adds full-bridge SiC MOSFET modules


1200V modules are tested to above 1400V for reliable operation in high-power, high-frequency environments

SemiQ Inc, a developer of SiC has unveiled the latest addition to the company’s QSiC family. The QSiC 1200V SiC MOSFET modules in full-bridge configurations are said to deliver near zero switching loss, significantly improving efficiency, reducing heat dissipation, and allowing the use of smaller heatsinks.

With a high breakdown voltage exceeding 1400V, the QSiC modules in full-bridge configurations withstand high-temperature operation at Tj = 175°C with minimal Rds(On) shift across the entire temperature spectrum.

SemiQ’s modules are suited for demanding applications that require bidirectional power flow or a broader range of control, such as solar inverters, drives and chargers for Electric Vehicles (EVs) DC-DC converters and power supplies.

In solar inverter applications, SemiQ says its technology empowers designers to achieve greater efficiency - reaching as high as 98 permeant - as well as more compact designs. It helps reduce heat loss, improve thermal stability, and enhance reliability, backed by over 54 million hours of HTRB/H3TRB testing. The 1200V MOSFETs also maximise efficiency gains in DC-DC converters while enhancing reliability and minimising power dissipation.

To guarantee a stable gate threshold voltage and premium gate oxide quality for each module, SemiQ conducts gate burn-in testing at the wafer level. In addition to the burn-in test, which contributes to mitigating extrinsic failure rates, various stress tests—including gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB)—are employed to attain the necessary automotive and industrial grade quality standards.

The devices also offer extended short-circuit ratings, and all parts have undergone testing surpassing 1400V.

“At SemiQ, our commitment lies in the meticulous optimisation and customisation of each module, ensuring they not only meet but exceed the unique demands of high-efficiency, high-power applications,” said Dr. Timothy Han, President at SemiQ. “We believe in empowering innovation through tailored solutions, and our SiC modules exemplify the pinnacle of performance, precision, and reliability in every customised design.”

The new 1200V modules in full-bridge packages are available in 20mΩ, 40mΩ, 80mΩ SiC MOSFETs categories.

SemiQ is set to debut its QSiC product family in SOT-227, half-bridge, and full-bridge packages at the Applied Power Electronics Conference (APEC) in Long Beach, CA, from February 25 to 29, 2024.

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