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Vishay 30V n-channel MOSFET features 'source flip' tech

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Device offers high power density and improved thermal performance in 3.3 mm x 3.3 mm package

Vishay Intertechnology has introduced a versatile new 30 V n-channel TrenchFET Gen V power MOSFET that delivers increased power density and enhanced thermal performance for industrial, computer, consumer, and telecom applications.

Featuring 'source flip' technology in the 3.3 mm by 3.3 mm PowerPAK 1212-F package, the Vishay Siliconix SiSD5300DN provides on-resistance of 0.71 mΩ at 10 V and on-resistance times gate charge — a critical figure of merit (FOM) for MOSFETs used in switching applications — of 42 mΩ*nC.

The device is said to offer 18 percent lower on-resistance to increase power density, while its source flip technology reduces thermal resistance by 63 °C/W to 56 °C/W. In addition, the SiSD5300DN’s FOM represents a 35 percent improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications.

PowerPAK 1212-F source flip technology reverses the usual proportions of the ground and source pads, extending the area of the ground pad to provide a more efficient thermal dissipation path and thus promoting cooler operation. At the same time, the PowerPAK 1212-F minimises the extent of the switching area, which helps to reduce the impact of trace noise.

In the PowerPAK 1212-F package specifically, the source pad dimension increases by a factor of 10, from 0.36 mm² to 4.13 mm², enabling a commensurate improvement in thermal performance. The PowerPAK 1212-F’s center gate design also simplifies parallelisation of multiple devices on a single-layer PCB.

The source flip PowerPAK 1212-F package of the SiSD5300DN is suitable for applications such as secondary rectification, active clamp battery management systems (BMS), buck and BLDC converters, OR-ing FETs, motor drives, and load switches. Typical end products include welding equipment and power tools; servers, edge devices, supercomputers, and tablets; lawnmowers and cleaning robots; and radio base stations.


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