+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
News Article

VMAX chooses Infineon hybrid power chip


Chinese firm picks CoolSiC hybrid discrete for next generation EV fast charging

Chinese firm picks CoolSiC hybrid discrete for next generation EV fast charging

VMAX, a Chinese manufacturer of power electronics and motor drives for new energy vehicles, has selected Infineon's CoolSiC hybrid discrete with TRENCHSTOP 5 Fast-Switching IGBT and CoolSiC Schottky diode for its next generation 6.6 kW OBC/DCDC on-board chargers.

Infineon’s components come in a D²PAK package and combine ultra-fast TRENCHSTOP 5 IGBTs with half-rated free-wheeling SiC Schottky barrier diodes to suite both hard and soft switching topologies.

“We are proud to choose Infineon's CoolSiC Hybrid device in our next-generation OBC, achieving higher reliability, stability, improved performance, and power density. This deepens our already strong partnership with Infineon and drives technological application innovation through close collaboration, working together to promote the thriving development of new energy vehicles,” said Jinzhu Xu, chief engineer, R&D Department at VMAX.

The hybrid discrete is said to benefit from very low switching losses at switching speeds above 50 kHz. In addition, the 5th generation CoolSiC Schottky diode offers increased robustness against surge currents, maximising reliability. Another feature is the diffusion soldering of the SiC diode which has improved the thermal resistance (R th) to the package for small chip sizes, resulting in increased power switching capability.

Amperesand raises $12.45M to transform power grids
Nexperia introduces Energy Balance Calculator
Worksport to use Infineon GaN in portable power product
£11M for University of Bristol WBG/UWBG research centre
UK government to invest £26.8M into semiconductor projects
Onsemi posts record automotive revenue
Qorvo boosts performance in 750V EV designs
VMAX chooses Infineon hybrid power chip
Toshiba adds more 60V P-channel MOSFETs
Bridging the power voltage gap
NSF funds research into Gallium Oxide traction inverters
Wolfspeed reports record design wins in Q2
Infineon and Honda enter collaboration
Power Integrations introduces offline flyback switcher
Diodes Inc launches dual-channel high side switches
Renesas Brings Industry-Leading Performance of RA8 Series MCUs to Motor Control Applications
Littelfuse Launches SM10 Series Varistor: A Breakthrough in Automotive and Electronics Surge Protection
$2.8M award to develop novel grid module
Vitesco to set up factory in Czech Republic
Silvaco joins 'GaN Valley'
Mouser opens alternative energy resource hub
Laser Thermal appoints Angstrom Scientific
Second GaN Systems founder joins QPT
Power Integrations Introduces InnoSwitch5 Offline Flyback Switcher IC
TTI Europe to stock Panjit semiconductors
Navitas and Shinry to work together on NEVs
Sinexcel to use Infineon CoolSiC MOSFETs
AOS announces double-sided cooling DFN package
Infineon and Anker open application centre
Rohm releases compact 600V MOSFETs
Webinar: Sample preparation and TEM imaging techniques for advanced power devices
Researchers develop damage-free etching for gallium oxide

Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: