VMAX chooses Infineon hybrid power chip
Chinese firm picks CoolSiC hybrid discrete for next generation EV fast charging
VMAX, a Chinese manufacturer of power electronics and motor drives for new energy vehicles, has selected Infineon's CoolSiC hybrid discrete with TRENCHSTOP 5 Fast-Switching IGBT and CoolSiC Schottky diode for its next generation 6.6 kW OBC/DCDC on-board chargers.
Infineon’s components come in a D²PAK package and combine ultra-fast TRENCHSTOP 5 IGBTs with half-rated free-wheeling SiC Schottky barrier diodes to suite both hard and soft switching topologies.
“We are proud to choose Infineon's CoolSiC Hybrid device in our next-generation OBC, achieving higher reliability, stability, improved performance, and power density. This deepens our already strong partnership with Infineon and drives technological application innovation through close collaboration, working together to promote the thriving development of new energy vehicles,” said Jinzhu Xu, chief engineer, R&D Department at VMAX.
The hybrid discrete is said to benefit from very low switching losses at switching speeds above 50 kHz. In addition, the 5th generation CoolSiC Schottky diode offers increased robustness against surge currents, maximising reliability. Another feature is the diffusion soldering of the SiC diode which has improved the thermal resistance (R th) to the package for small chip sizes, resulting in increased power switching capability.
