Toshiba adds more 60V P-channel MOSFETs
New devices will reduce power consumption in automotive applications
Toshiba Electronics Europe has announced the availability of two more -60V P-channel MOSFETs based on the company's U-MOS VI process. The devices are for automotive applications such as load switches, semiconductor relays and motor drives.
The new XPH8R316MC and XPH13016MC are already qualified to meet AEC-Q101 - the automotive reliability standard. As part of this, they are housed in an SOP Advance(WF) package - a surface mount style with a wettable flank terminal structure. This facilitates automated optical inspection (AOI) of the solder joints – key to reliability in harsh automotive environments. An additional advantage is the copper connectivity within the package that reduces package resistance, improves efficiency and reduces heat build-up.
The XPH8R316MC is rated for -90A continuous drain current (ID) and the XPH13016MC is rated for an ID of -60A. The pulsed drain current (IDP) is double these values, -180A and -120A, respectively. Both devices are rated for a drain-source voltage (VDSS) of -60V and are capable of operating at channel temperatures (Tch) up to 175degC.
The maximum drain-source on-resistance of the XPH8R316MC is 8.3mΩ, which is approximately 25 percent lower than Toshiba’s existing TPCA8123. For the XPH13016MC, the value is 12.9mΩ, approximately 49 percent lower than the TPCA8125.