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Transphorm announces 4-Lead TO-247 GaN FETs


SuperGaN devices can serve as original design-in option or drop-in replacements for silicon and SiC solutions

Transphorm has announced two new SuperGaN devices in a 4-lead TO-247 package (TO-247-4L). The TP65H035G4YS and TP65H050G4YS FETs offer a 35 mOhm and 50 mOhm on resistance respectively, complete with a kelvin-source terminal that gives customers versatile switching capabilities with even lower energy losses.

Transphorm’s 4-lead SuperGaN devices can serve as an original design-in option or as a drop-in replacement for 4-lead silicon and SiC solutions supporting power supplies at 1 kilowatt and up in a wide range of data centre, renewables, and broad industrial applications.

As noted, the 4-lead configuration offers flexibility to users for further improved switching performance. In a hard-switched synchronous boost converter, the 35 mOhm SuperGaN 4-lead FET reduced losses by 15 percent at 50 kilohertz (kHz) and by 27 percent at 100 kHz when compared to a SiC MOSFET device with a comparable on resistance.

“We continue to expand our product portfolio to bring to market GaN FETs that help customers leverage our SuperGaN platform performance advantages in whatever design requirement they may have,” said Philip Zuk, SVP, Business Development and Marketing, Transphorm. “The four-lead TO-247 package provides flexibility for designers and customers seeking even greater power system loss reductions with little to no design modifications on silicon or SIC systems. It’s an important addition to our product line as we ramp into higher power applications.”

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