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A*STAR and Centrotherm establish SiC partnership


Partners to combine IME's 200mm R&D SiC pilot line with Centrotherm’s tools to enhance the performance and reliability of SiC-based devices

A*STAR Institute of Microelectronics’ (IME) and Centrotherm have embarked on a partnership to advance SIC technology by combining IME's 200mm open R&D SiC pilot line with Centrotherm’s diffusion and annealing tools.

The collaboration aims to build on IME’s process integration and device characterisation capabilities and Centrotherm’s specialised tools to develop thermal processes for SiC-based device fabrication, such as optimising trench and gate oxide formation. The aim is to enhance the performance and reliability of SiC-based devices such as MOSFETs and diodes. As part of the partnership, Centrotherm will establish a dedicated technology team in Singapore to offer technological know-how, process recipes, and on-site support.

“We look forward to advance SiC technology through our partnership with Centrotherm. Through the combination of IME's 200mm SiC R&D pilot line with Centrotherm’s advanced tools, we can accelerate R&D to better address the industry’s needs,” said Terence Gan, executive director of A*STAR’s IME.

“This collaboration between IME and Centrotherm marks an exciting chapter in the world of SiC technology. The shared vision, expertise and resources of both organisations promise to drive innovation, elevate industry standards and foster local growth in the field of semiconductor manufacturing. As we move towards the future of SiC and power electronics, we plan to further enhance diffusion and annealing specialisation in wide-bandgap process modules and expand expertise into SiC, GaN, and other innovative wide-bandgap materials,” said Helge Haverkamp, CTO of Centrotherm.

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