Nexperia offers GaN FETs in compact SMD packaging
Combining the benefits of copper-clip packaging and wide bandgap semiconductors
Nexperia is launching high voltage GaN FET devices in proprietary copper-clip CCPAK surface mount packaging.
The first available device is the 650V GAN039-650NTB, a 33 mΩ (typ.) GaN FET within the CCPAK1212i top-side cooling package, which is suitable for renewable energy applications such as solar and residential heat pumps and industrial applications such as servo drives, switched-mode power supplies (SMPS), servers and telecom.
Nexperia’s CCPAK surface mount packaging uses copper-clip package technology to replace internal bond wires. This reduces parasitic losses, optimises electrical and thermal performance, and improves device reliability. For flexibility in designs, these CCPAK GaN FETs are available in top- or bottom-cooled configurations to further improve heat dissipation.
The GAN039-650NTB has a cascode configuration to enable superior switching and on-state performance, with a robust gate offering high margins against noise. According to the company, this feature also simplifies application designs by eliminating the requirement for complex gate drivers and control circuitry, instead allowing them to be conveniently driven using standard silicon MOSFET drivers.
“Nexperia recognises that designers of industrial and renewable energy equipment need a highly robust switching solution that can provide excellent thermal efficiency when performing power conversion,” according to Carlos Castro, VP, and general manager of the GaN FET business at Nexperia. “This is why Nexperia decided to bring together the exceptional switching performance of its cascode GaN FETs with the exceptional thermal properties of its CCPAK packaging to offer customers a compelling solution.”
