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Rohm gate driver maximises GaN performance


Nanosecond gate drive contributes to greater energy savings and miniaturisation

Rohm has developed a gate driver IC for GaN devices that achieves drive speeds of the order of nanoseconds.

The result is fast switching with a minimum gate input pulse width of 1.25ns, contributing to smaller, more energy efficient, higher performance applications.

In addition, Rohm says it has implemented a unique method to suppress gate voltage overshoots into the driver. When used with Rohm's EcoGaN products, this feature further simplifies the design and enhances application reliability.

Potential applications are power supply units in server systems and automotive and industrial LiDAR systems, which demand high-speed pulsed laser light to further increase recognition accuracy.

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