Toshiba Launches 30V MOSFET
N-channel common-drain device is suitable for devices with USB and for protecting battery packs
Toshiba has launched the SSM10N961L, a low on-resistance, 30V N-channel common-drain MOSFET, suitable for devices with USB and for protecting battery packs. Shipments start today.
Until now, the company's range of N-channel common-drain MOSFETs has focused on 12V products, mainly for use in protecting the lithium-ion battery packs of smartphones. The release of a 30V product realises a wider selection of applications requiring voltages higher than 12V, such as load switching for the power lines of USB charging devices, and the protection of lithium-ion battery packs in laptop PCs and tablets.
To build a bi-directional switch with a low drain-source on-resistance (RDS(ON)) has required two MOSFETs, either 3.3×3.3mm or 2×2 mm, with low RDS(ON). Toshiba’s new product uses a new, small, thin package TCSPAG-341501 (3.37mm×1.47mm (typ.), t=0.11mm (typ.)), and features low source-source on-resistance (RSS(ON)) of 9.9mΩ (typ.) in a single package common-drain configuration
Combining the product with a driver IC in Toshiba’s TCK42xG series forms a load switching circuit with a backflow prevention function or a power multiplexer circuit that can switch operations between Make-Before-Break (MBB) and Break-Before-Make (BBM).
Toshiba offers a reference design for a power multiplexer circuit (using common-drain MOSFETs) based on this product combination.
