Magnachip launches latest 600V SJ MOSFET
Achieves low RDS(on) of 175mΩ and meets the technical requirements of servers and OLED TVs
Magnachip Semiconductor has released its 6th-generation 600V Super Junction MOSFET enhanced with 180nm microfabrication technology.
The technology is said to improve upon the previous generation of SJ MOSFETs by narrowing the cell-pitches by 50 percent and lowering the RDS(on) by 42 percent. As a result, this product comes in the same Decawatt Package (DPAK), while offering low RDS(on) of 175mΩ and higher power density.
The total gate charge is lowered by approximately 29 percent compared to the previous generation, resulting in reduced switching loss and enhanced power efficiency. In addition, a Zener diode is embedded between the gate and the source to strengthen the ruggedness and reliability of the MOSFET in an application and prevent it from sustaining damage caused by external surges or electrostatic discharges.
Magnachip says the new 600V SJ MOSFET can be used in a wide range of applications, such as servers, OLED TVs and laptop fast chargers.
The company plans to unveil additional 6th-generation SJ MOSFETs, including those with a fast recovery body diode, in 2024.
