Rohm announces 100V dual MOSFETs
New devices combine N-channel and P-channel MOSFET chips
Rohm has developed dual MOSFETs that integrate two 100V chips in a single package.Suitable for fan motor drives in basestations and industrial equipment, these new models combine N-channel and P-channel MOSFET chips.
With the transition to 12V/24V to 48V systems in communication basestations and industrial equipment, switching MOSFETs are required with a withstand voltage of 100V to account for voltage fluctuations, as 48V power supplies are also used in the fan motors for cooling these applications.
However, increasing the breakdown voltage raises ON resistance, leading to decreased efficiency – making it difficult to achieve both lower RDS(on) and higher breakdown voltage. Moreover, unlike multiple individual drive MOSFETs normally applied in fan motors, dual MOSFETs that integrate two chips in one package are increasingly being adopted to save space.
The two new series are the HP8KEx/HT8KEx (N-channel+N-channel) and HP8MEx (N-channel+P-channel). Both achieve low RDS(on) by adopting new backside heat dissipation packages. As a result, RDS(on) is reduced by up to 56 percent compared with standard dual MOSFETs (19.6mΩ for the HSOP8 and 57.0mΩ for the HSMT8 Nch+Nch), contributing to significantly lower set power consumption.
At the same time, Rohm says that combining two chips in a single package provides greater space savings by reducing area considerably. For example, replacing two single-chip TO-252 MOSFETs with one HSOP8 decreases footprint by 77 percent.
