Infypower to use Infineon CoolSiC chips
Companies to expand presence in new energy vehicle charger market
Infineon has announced a collaboration with Infypower, a Chinese vehicle charging company. Infineon will provide Infypower with 1200 V CoolSiC MOSFET power semiconductor devices to improve the efficiency of electric vehicle charging stations.
SiC’s high power density enables the development of high-performance, lightweight, and compact chargers, especially for supercharging stations and ultra-compact wall-mounted DC charging stations. Compared to traditional silicon-based solutions, SiC technology in EV charging stations can increase efficiency by 1 percent, reducing energy losses and operating costs. In a 100 kW charging station, this translates to 1 kWh of electricity savings, saving €270 annually and reducing carbon emissions by 3.5 tons. This drives the increasing adoption of SiC power devices in EV charging modules.
“The collaboration between Infineon and Infypower in the field of charging solutions for electric vehicles (EV) provides an excellent system-level technology solution for the local EV charging station industry,” said Peter Wawer, division president of Infineon’s Green Industrial Power Division. “It will significantly improve charging efficiency, accelerate charging speed, and create a better user experience for owners of electric cars.”
“With Infineon’s more than 20 years of continuous advancement in SiC product offering and the strength of integrated technology, Infypower can consolidate and maintain its technological outstanding position in the industry by adopting state-of-the-art product processes and design solutions“, said Qiu Tianquan, president of Infypower China. “We can also set a new standard for charging efficiency of DC chargers for new energy vehicles. As a result, customers can enjoy more convenience and unique value, promoting the healthy development of the EV charging industry.”
