Rohm announces new EcoGaN chips
Reduces component volume by 99 percent and power loss by 55 percent when replacing silicon MOSFETs
Rohm has developed power stage ICs with built-in 650V GaN HEMTs and gate driver - the BM3G0xxMUV-LB series. The devices are suitable for primary power supplies inside industrial and consumer applications such as data servers and AC adapters.
Consumer and industrial sectors more and more demand greater energy savings to achieve a sustainable society in the last few years. However, while GaN HEMTs are expected to significantly contribute to greater miniaturisation and improved power conversion efficiency, the difficulty in handling the gate compared to silicon MOSFETs requires the use of a dedicated gate driver. In response, Rohm developed power stage ICs that integrate GaN HEMTs and gate drivers into a single package by leveraging core power and analog technologies, facilitating mounting considerably.
On top, the BM3G0xxMUV-LB series (BM3G015MUV-LB, BM3G007MUV-LB) incorporates additional functions and peripheral components designed to maximise GaN HEMT performance along with 650V GaN HEMTs - the next generation of power devices. Rohm says that features such as a wide drive voltage range (2.5V to 30V) enable compatibility with virtually any controller IC in primary power supplies - facilitating replacement of existing silicon (Super Junction) MOSFETs. This makes it possible to simultaneously reduce component volume and power loss by approx. 99 percent and 55 percent, respectively, achieving higher efficiency in a smaller size.