Vishay's 650V MOSFET slashes on-resistance
On-resistance is 48.2 percent lower than previous generation devices
Vishay Intertechnology has introduced a new fourth-generation 650V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications.
Compared to previous-generation devices, the Vishay Siliconix n-channel SiHP054N65E slashes on-resistance by 48.2 percent while offering a 59 percent lower resistance times gate charge, a key figure of merit (FOM) for 650V MOSFETs used in power conversion applications.
The SiHP054N65E and other devices in the fourth-generation 650V E Series address the need for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC/DC converter blocks.
Typical applications will include servers, edge computing, and data storage; UPS; high intensity discharge (HID) lamps and fluorescent ballast lighting; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.
Built on Vishay’s latest E Series superjunction technology, the SiHP054N65E’s low typical on-resistance of 0.051 Ω at 10V results in a higher power rating for applications > 2 kW and allows the device to address the Open Compute Project’s Open Rack V3 (ORV3) standards.
In addition, the MOSFET offers ultra low gate charge down to 72 nC. The resulting FOM of 3.67 Ω*nC is 1.1 percent lower than the closest competing MOSFET in the same class, which translates into reduced conduction and switching losses to save energy and increase efficiency. This allows the device to address the specific titanium efficiency requirements in server power supplies or reach 96 percent peak efficiency in telecom power supplies.
For improved switching performance in hard-switched topologies such as PFC, half-bridge, and two-switch forward designs, the MOSFET provides low typical effective output capacitances Co(er) and Co(tr) of 115 pF and 772 pF, respectively. The device’s resulting resistance times Co(er) FOM is an industry-low 5.87 Ω*pF.
Samples and production quantities of the SiHP054N65E are available now.