Infineon expands TRENCHSTOP IGBT family
New variant of Gen7 discrete 650V IGBTs targets energy-efficient power applications
Infineon is expanding its 7th generation TRENCHSTOP IGBT family with the discrete 650V IGBT7 H7 variant. The devices are said to feature a cutting-edge EC7 co-packed diode with an advanced emitter-controlled design, coupled with high-speed technology.
Built using micro-pattern trench technology, the TRENCHSTOP IGBT7 H7 is designed for control and performance, resulting in significant loss reduction, improved efficiency and higher power density. As a result, the device is well-suited for use in string inverters, energy storage systems, EV charging, as well as traditional applications like industrial UPS and welding.
In a discrete package, the 650V TRENCHSTOP IGBT7 H7 can deliver up to 150A. The portfolio includes variants from 40A to 150A, offered in four different package types: TO-247-3 HCC, TO-247-4, TO-247-3 Plus and TO-247-4 Plus.
For improved performance, the TO-247 4-pin packages are said to reduce switching losses and offer additional benefits such as lower voltage overshoot, minimised conduction losses and the lowest reverse current loss. These features simplify the design and minimise the need to connect devices in parallel.
The device is qualified for industrial use according to the relevant tests of JEDEC47/20/22, especially HV-H3TRB, making it suited for outdoor applications. The TRENCHSTOP IGBT 7 H7 can be ordered now. In addition, qualification samples are available.
