Toshiba launches tiny common-drain N-channel MOSFET
New device features very low on-resistance making it suitable for quick charging applications
Toshiba has launched a 12V common-drain N-channel MOSFET with a current rating of 20A, for use in battery protection circuits in lithium-ion (Li-ion) battery packs, such as those commonly used for smartphones, tablets, power banks, compact digital cameras, digital SLR cameras and other similar applications.
The new 20A SSM14N956L is rated for a 12V source-to-source voltage (VSSS) and uses Toshiba’s micro-process, in common with the already released 13.5A SSM10N954L. This ensures on-resistance (RSS(ON)) characteristics, as low as 1mΩ, which limits conduction losses. Additionally, the process delivers low gate-source leakage current (IGSS) of ±1µA (max.), allowing for low standby power consumption. Together, these attributes allow for extended battery operation between charges.
The new SSM14N956L is designed as a chip-scale package, known as TCSPED-302701. The dimensions are just 2.74mm x 3.0mm with a typical height of just 0.085mm.
