+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
Loading...
News Article

Toshiba launches tiny common-drain N-channel MOSFET

News

New device features very low on-resistance making it suitable for quick charging applications

Toshiba has launched a 12V common-drain N-channel MOSFET with a current rating of 20A, for use in battery protection circuits in lithium-ion (Li-ion) battery packs, such as those commonly used for smartphones, tablets, power banks, compact digital cameras, digital SLR cameras and other similar applications.

The new 20A SSM14N956L is rated for a 12V source-to-source voltage (VSSS) and uses Toshiba’s micro-process, in common with the already released 13.5A SSM10N954L. This ensures on-resistance (RSS(ON)) characteristics, as low as 1mΩ, which limits conduction losses. Additionally, the process delivers low gate-source leakage current (IGSS) of ±1µA (max.), allowing for low standby power consumption. Together, these attributes allow for extended battery operation between charges.

The new SSM14N956L is designed as a chip-scale package, known as TCSPED-302701. The dimensions are just 2.74mm x 3.0mm with a typical height of just 0.085mm.


×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • View all news 22645 more articles
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: