Toshiba releases 100V N-channel MOSFET
Features low on-resistance and an expanded safe operating area, using new generation process
Toshiba has launched a 100V N-channel power MOSFET fabricated with its latest-generation process, U-MOS X-H.
The product targets applications such as switching circuits and hot swap circuits on the power lines of industrial equipment used for data centres and communications base stations. Shipments start today.
Called the TPH3R10AQM, the chip has 3.1mΩ maximum drain-source on-resistance, 16 percent lower than Toshiba’s 100V product, TPH3R70APL, which uses the earlier generation process. By the same comparison, TPH3R10AQM has expanded its safe operating area by 76 percent making it suitable for linear mode operation.
Reducing the On-resistance and expanding the linear operating range in the safe operating area reduce the number of parallel connections. Furthermore, its gate threshold voltage range of 2.5V to 3.5V, makes it less likely to malfunction due to gate voltage noise.
The new product uses the highly footprint compatible SOP Advance(N) package.
