Toshiba releases 600V super junction n-channel MOSFET
Reduces drain-source on-resistance per unit area by approximately 13 percent
Toshiba has expanded its line-up of n-channel power MOSFETs fabricated with the latest-generation process[1], with a 600V super junction structure suitable for data centers, switching power supplies, and power conditioners for photovoltaic generators. The new product, TK055U60Z1, is the first 600V product in the DTMOSVI series.
By optimising the gate design and process, 600V DTMOSVI series products reduce drain-source On-resistance per unit area by approximately 13 percent, and drain-source On-resistance × gate-drain charge, the figure of merit for MOSFET performance, by approximately 52 percent, compared to Toshiba’s current generation DTMOSIV-H series products with the same drain-source voltage rating. This ensures the series achieve both low conduction loss and low switching loss, and helps to improve efficiency of the switching power supplies.
The new product is housed in a TOLL package that allows Kelvin connection of its signal source terminal for the gate drive. The influence of inductance in the source wire in the package can be reduced to accentuate the high-speed switching performance of the MOSFET, which suppresses oscillation during switching.
Toshiba is continuing to expand its 600V DTMOSVI series line-up, and has already released 650V DTMOSVI series products.
