Nexperia introduces interactive datasheets for MOSFETs
Datasheet parameters dynamically respond to user inputs
Nexperia has announced the release of next-generation interactive datasheets to accompany its power MOSFETs.
By manipulating interactive sliders within the datasheets, users can manually adjust the voltage, current, temperature and other conditions for their circuit application and watch how the operating point of a device dynamically responds to these changes.
These interactive datasheets offer a type of graphical user interface to a circuit simulator, using Nexperia’s electrothermal models to calculate the operating point of a device. In addition, they allow engineers to visualise immediately the interaction between parameters such as gate voltage, drain current, RDS(on) and temperature. Their collective contribution to the device behaviour is then displayed dynamically in tables or graphs.
As a result, Nexperia says its interactive datasheets can significantly increase productivity by eliminating the time needed for an engineer to perform manual calculations or set up and debug a circuit simulation.
Chris Boyce, senior director of Nexperia’s Power MOSFET business adds: “Whether you are a design engineer looking to see how a device will perform at elevated temperature, or a component engineer trying to compare devices under different test conditions, our new interactive datasheets are designed to make your life easier.”
The technology powering these datasheets is the same as that used in Nexperia’s precision electrothermal MOSFET models, which demonstrate how the behaviour of discrete MOSFETs changes with temperature. The new interactive datasheets are offered in addition to the traditional static datasheets and operate in any standard web browser without the requirement of additional software for device simulation.
More than 200 interactive datasheets are already available, covering the devices in Nexperia’s latest automotive and industrial power MOSFETs.