Navitas announces 650V SiC diodes
5th-gen diodes deliver high performance with proprietary ’low-knee’ technology for cool operation
Navitas Semiconductor has announced the fifth generation of high-speed GeneSiC silicon carbide (SiC) power diodes for demanding data centre, industrial motor-drive, solar and consumer applications.
The 650 V-rated Merged-PiN Schottky (MPS) diodes are said to integrate a unique PiN-Schottky structure, delivering ‘low-built-in voltage-biasing’ (‘low knee’) for high efficiency and robustness across all load conditions.
“We’re delivering reliable, lead-edge performance for in-demand applications like AI and Chat GPT data centre power,” noted Ranbir Singh, Navitas EVP for SiC. “Efficient, cool, dependable operation ensures long lifetimes and brings peace-of-mind to power designers and optimises their time-to-prototype and time-to-market.”
The GeneSiC MPS design combines features of both PiN and Schottky diode structures, producing a low forward-voltage (VF) drop of only 1.3 V, high surge-current capability (IFSM), and minimised temperature-independent switching losses. Proprietary thin-chip technology is said to further reduce VF and improves thermal dissipation for cooler operation. The diodes are offered in a low-profile surface mount QFN package for the first time.
Ranging from 4 to 24 A capability, in a range of surface-mount (QFN, D2-PAK) and through-hole (TO-220, TO-247) packaging, the GExxMPS06x-series MPS diodes cover applications ranging from 300 to 3,000 W and diverse circuits such as solar panel boost converters, and continuous-current mode power factor correction (PFC) in gaming consoles. With a ‘common-cathode’ configuration, the TO-247-3 package offers flexibility for high power-density and bill-of-material reduction in interleaved PFC topologies.