Rohm begins mass producing 650V GaN HEMTs
Increasing efficiency and reducing size of power supply systems
Rohm has started mass production of 650V GaN HEMTs GNP1070TC-Z and GNP1150TCA-Z optimised for a wide range of power supply systems applications.
These new products are jointly developed with Ancora Semiconductors, an affiliate of Delta Electronics, that develops GaN devices.
The GNP1070TC-Z and GNP1150TCA-Z are said to deliver industry-leading performance in terms of RDS(ON) × Ciss / RDS(ON) × Coss, a figure of merit for GaN HEMTs, translating to higher efficiency in power supply systems. At the same time, a built-in ESD protection element improves electrostatic breakdown resistance up to 3.5kV, leading to higher application reliability.
GaN HEMTs’ high-speed switching characteristics also contribute to greater miniaturisation of peripheral components, according to the company.