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Transphorm introduces pin-compatible SuperGaN FETs


New PQFN packages are drop-in replacements for e-mode GaN solutions

Transphorm has announced the availability of six SuperGaN FETS in surface mount PQFN 5x6 and 8x8 packages. The company says these six d-mode configuration devices can serve as a first design source or as pin-to-pin drop-in replacements and/or secondary sources for e-mode GaN solutions.

The devices are 72, 150, 240, and 480 mΩ FETs. The 72mΩ FET is designed for use in datacom, broad industrial, PV inverter, servo motor, computing systems, and general consumer applications. The 150, 240, and 480 mΩ FETs are designed for use in power adapter, low power SMPS, lighting, and low power consumer applications.

For power systems that require additional thermal performance from the SuperGaN platform, Transphorm also offers SMDs in optimised performance packages. Transphorm says the d-mode configuration’s combination of a low-voltage silicon MOSFET paired with the GaN HEMT works with standard, off-the-shelf controllers and/or drivers.

Replacing e-mode devices with SuperGaN d-mode FETs, according to the company, delivers higher performance and lower operating temperature through lower conduction losses, resulting in longer lifetime reliability. One example can be found in a recent head-to-head comparison wherein 50 mΩ e-mode was replaced by 72 mΩ SuperGaN technology in a 280 W gaming laptop charger.

In the charger analysis, the SuperGaN FETs operated at the controller’s output voltage range (whereas e-mode had to level shift) with cooler temperatures. The SuperGaN temperature coefficient of resistance (TCR) is approximately 25 percent lower than that of e-mode, contributing to the lower conduction losses. Additionally, the peripheral component count was reduced by 20 percent, suggesting a lower BOM cost.

“Transphorm continues to produce a strong GaN device portfolio, one that covers the widest power spectrum today. We’ve solidified our low power strategy with the release of these industry standard packages, which follow the recently announced SiP developed with Weltrend Semiconductors,” said Philip Zuk, SVP of business development and marketing, Transphorm. “Customers now have a choice of how they can tap into the advantages of SuperGaN whether it be through performance packages, pin-to-pin e-mode compatible Industry standard packages, or a system-in-package.”

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