Toshiba releases 150V n-channel power MOSFET
Low on-resistance and improved reverse recovery help increase power supply efficiency
Toshiba has launched a 150V N-channel power MOSFET, the TPH9R00CQ5, which uses the latest generation U-MOSX-H process, for switching power supplies of industrial equipment, such as that used in data centres and communications base stations. Shipments start today.
TPH9R00CQ5 features a low drain-source on-resistance of 9.0mΩ (max), approximately a 42 percent reduction from Toshiba’s existing product, TPH1500CNH1. Compared with Toshiba’s existing product TPH9R00CQH, the reverse recovery charge is reduced by about 74 percent and the reverse recovery time by about 44 percent, both key reverse recovery characteristics for synchronous rectification applications. Used in synchronous rectification applications, the new product reduces the power loss of switching power supplies and helps improve efficiency.
Furthermore, compared to TPH9R00CQH, the new product reduces spike voltage generated during switching, helping lower the EMI of power supplies. The product uses the popular, surface-mount-type SOP Advance(N) package.
Toshiba has developed reference designs using the new product including a 1 kW non-isolated buck-boost DC-DC converter for telecommunications equipment, and a three-phase multi level inverter.
To support circuit design for switching power supplies there is a G0 SPICE model, which verifies circuit function in a short time, and highly accurate G2 SPICE models, which accurately reproduce transient characteristics.
