Ultra high speed GaN control chips
By reducing pulse width to 2ns, Rohm says it can step down voltages up to 60V to low voltages down to 0.6V with a single power supply IC
Rohm has developed ultra-high-speed control IC technology to maximise the performance of GaN and other high-speed switching devices.
While the adoption of GaN devices has expanded in recent years due to their superior high-speed switching characteristics, the speed of control ICs, which are responsible for directing the driving of these devices, has become challenging.
In response, Rohm has redesigned its ultra-high-speed pulse control technology Nano Pulse Control to improve the control pulse width from the conventional 9ns to 2ns.
By reducing the minimum control pulse width of the Control IC from the conventional 9ns to 2ns, Rohm says it is possible to step down from high voltages up to 60V to low voltages down to 0.6V with a single power supply IC in 24V and 48V applications. On top, support for smaller drive peripheral components for high frequency switching of GaN devices decreases the mounting area by approximately 86 percent over conventional solutions when paired with an EcoGaN power supply circuit.
Rohm is currently working to commercialise Control ICs using this technology, with plans to start sample shipment of 100V one channel DC-DC Control IC in the second half of 2023. Using in conjunction with Rohm GaN devices (EcoGaN series), it is expected to result in significant energy savings and miniaturisation in a variety of applications, including base stations, data centres, factory automation) equipment, and drones.
