Innoscience delivers first SolidGaN chip
SolidGaN device includes two 100V 3.2mΩ GaN HEMTs plus driver circuitry in LGA package
GaN-on-Si company Innoscience has launched the first in a new family of SolidGaN integrated GaN devices. ISG3201 is a complete half-bridge circuit including two 100V 3.2mΩ InnoGaN HEMTs and the required driver circuitry in an LGA package measuring just 5x6.5x1.1mm.
The ISG3201 has a 34A continuous current capability, zero reverse recovery charge and ultra-low on resistance. Gate loop and power loop parasitics are kept below 1nH. As a result, voltage spikes on switching nodes are minimised, according to the company. The Turn-On speed of the half-bridge GaN HEMTs can be adjusted using a single resistor.
ISG3201 is suitable for high frequency Buck converters, half-bridge or full-bridge converters, Class D audio amplifiers, LLC converters and power modules. Overall, the integrated ISG3201 solution is said to save up to 20 percent PCB space on discrete GaN designs and 73 percent board space on traditional silicon implementations.
Yi Sun, general manager of Innoscience America and SVP said: “Innoscience is now offering designers a choice between the ultimate flexibility of using a discrete solution, and this new integrated approach which is very compact and simple to use”.