Qorvo reveals TOLL package for 750V SiC FETs
Devices suit space-constrained applications such as AC/DC supplies ranging from several 100s of watts to multiple kilowatts
At APEC 2023, Qorvo showed a new surface-mount TO-leadless (TOLL) package for its high-performance, 5.4 mΩ 750V SiC FETs. This is the first product in a family of 750V SiC FETs that will be released in the TOLL package with on-resistance ranging from 5.4 mΩ to 60 mΩ.
These devices are suitable for space-constrained applications such as AC/DC power supplies ranging from several 100s of watts to multiple kilowatts, as well as solid-state relays and circuit breakers up to 100A.
In the 600/750V class of power FETs, Qorvo Gen 4 SiC FETs are said to offer unmatched performance across the main figures of merit for on-resistance and output capacitance.
Additionally, in the TOLL package, at 5.4 mΩ the devices have 4 to 10 times lower on-resistance than competing best-in-class Si MOSFETs, SiC MOSFETs and GaN transistors. The 750V rating of the SiC FETs is also 100-150V higher than the alternative technologies, providing a significantly enhanced design margin for managing voltage transients.
Anup Bhalla, chief engineer for Qorvo’s Power Devices business, said: “The launch of our 5.4 mΩ Gen4 SiC FETs in TOLL packaging is an important step in our goal of providing designers with the industry's best performance and multiple device options. Customers working on industrial applications in particular need this combination of flexibility and cost-efficient power design.”
The TOLL package is 30 percent smaller in footprint and at 2.3 mm half the height of comparable alternative D2PAK surface-mount offerings. Despite the size reduction, advanced manufacturing techniques achieve an industry-leading 0.1°C/W thermal resistance from junction to case. The DC current rating is 120A up to case temperatures of 144°C, while the pulsed current rating is 588A up to 0.5 millisecond.
These Gen4 SiC FETs use Qorvo’s cascode circuit configuration, in which a SiC JFET is co-packaged with a silicon MOSFET to produce a device with all of the efficiency advantages of wide bandgap switch technology and the simpler gate drive of silicon MOSFETs.
The Qorvo TOLL-packaged, Gen4 5.4 mΩ SiC FET is included in Qorvo’s FET-Jet free-to-use online calculator, which allows instant evaluation of efficiency, component losses and junction temperature rise for parts used in a wide variety of AC/DC and isolated/non-isolated DC/DC converter topologies. Single and paralleled devices may be compared under user-specified heat-sinking conditions to determine an optimal solution.