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Friday 17th January 2014
Thursday 16th January 2014
IQE Plc to play a key part in a consortium of high tech businesses and academia in a major Clean Energy Initiative announced in North Carolina by the U.S. President
Thursday 16th January 2014
The Next Generation Power Electronics National Manufacturing Innovation Institute will use $70 million provided by the U.S. DOE's Advanced Manufacturing Office to support and manage its programs over the next five years
Tuesday 14th January 2014
The superlens translates a magnetic field emanating from one power coil onto its twin nearly a foot away, inducing an electric current in the receiving coil
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Tuesday 14th January 2014
The company's latest MOSFET increases the efficiency of smartphone and tablet battery charging
Tuesday 14th January 2014
The agreement between the two companies aims provide customers with greater product choice and enhanced purchasing experience
Tuesday 14th January 2014
The market is estimated to take in more than $5 billion by the end of 2013
Tuesday 14th January 2014
The product order follows multi-year process development cooperation in thin-wafer applications for PowerMOS and Insulated Gate Bipolar Transistor devices
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Thursday 9th January 2014
The gallium nitride based 'Production Act Title III Project' has resulted in improved technologies for communication, imaging and sensor systems
Thursday 9th January 2014
Thursday 9th January 2014
For mobile computing, the p-channel Gen III MOSFET offers RDS(on) down to 0.0016 Ω at -10 V in a PowerPAK SO-8 package
Wednesday 8th January 2014
IDT’s highly-integrated solution enables development of Qi-compliant USB-powered wireless charging bases with 75 percent fewer ICs than competing solutions
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Monday 6th January 2014
Thursday 2nd January 2014
The gallium nitride-on-silicon power amplifier covers numerous applications up to 1GHz
Monday 30th December 2013
The gallium nitride SPICE chips are incorporated in NI's Multisim 13.0 software, which is designed to improve power system efficiency and reduce final product size and development time
Sunday 29th December 2013
The silicon carbide 3.3kV, 1,500A inverter is suitable for high power trains

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