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Monday 23rd December 2013
The market-ready high voltage GaN-on-silicon power device has been a long time coming. PEW asks Venture-Q's Zel Diel if the industry will deliver soon.
Wednesday 18th December 2013
The company’s power detector is designed for the communications, test & sensor markets
Monday 16th December 2013
The firm has secured a project to lower energy consumption of set top boxes and other plug load devices deployed in California and nationwide beyond current and planned EnergyStar and Department of Energy standards
Friday 13th December 2013
The company's combined CMOS-DMOS process reduces heat generation by 30 percent
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Friday 13th December 2013
The Improved surface thermal conductance, reduced series resistance and better thermal cycling come with improved switching performance, a benefit for dies and modules
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Monday 9th December 2013
The InGaAs/GaAsSb FET technology shows a potential use in high performance devices that operate with a very low power consumption and voltages to enable the 'Internet of Things'
Friday 6th December 2013
Apart from the fact that silicon substrates are cheap, 8-inch CMOS semiconductor companies will find it relatively inexpensive to shift to growing gallium nitride-on-silicon LEDs. This could encourage chip manufacturers to pursue GaN-on-silicon power devices as a back up plan without major changes to equipment and processes
Thursday 5th December 2013
Acquisition adds equalizer and coaxial transceiver products and technologies for automotive and industrial networking markets to Microchip’s portfolio 
Wednesday 4th December 2013
New semiconductor technologies such as GaN and SiC are emerging to meet the growing demands of power devices today. To meet these requirements, new test and measurement tools are needed. 
Monday 2nd December 2013
The integrated tool will be used for semiconductor evaluation and mass production
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Monday 2nd December 2013
The CEO of IQE has been acknowledged for his contributions to the semiconductor industry at Elektra 2013
Thursday 28th November 2013
The companies will bring together technologies to accelerate market establishment and volume production of high-reliability, high-performance gallium nitride devices

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